器件名称: HZM27WA
功能描述: Silicon Epitaxial Planar Zener Diode for Surge Absorb
文件大小: 30.49KB 共6页
简 介:HZM27WA
Silicon Epitaxial Planar Zener Diode for Surge Absorb
ADE-208-352A(Z) Rev 1 Feb. 1999 Features
HZM27WA has two devices, and can absorb external + and -surge. MPAK Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HZM27WA Laser Mark 27A Package Code MPAK
Outline
3
2
1
(Top View)
1 Cathode 2 Cathode 3 Anode
HZM27WA
Absolute Maximum Ratings (Ta = 25°C)
Item Power dissipation Junction temperature Storage temperature Note Symbol Pd Tj Tstg
*1
Value 200 150 -55 to +150
Unit mW °C °C
1. Two device total, See Fig.2.
Electrical Characteristics (Ta = 25°C) *1
Item Zener voltage Reverse current Capacitance
*2
Symbol VZ IR C rd
Min 30
Typ (27)
Max
Unit A pF kV
Test Condition I Z = 2 mA, 40ms pulse VR = 21V VR = 0V, f = 1 MHz I Z = 2 mA C =150pF, R = 330 , Both forward and reverse direction 10 pulse
25.10
28.90 V 2 70
Dynamic resistance ESD-Capability
*3
Notes 1. Per one device. 2. Reference only. 3. Failure criterion ; IR2 A at VR = 21V.
2
HZM27WA
Main Characteristic
10
250
1.0mm
8
(mA) Power Dissipation Pd (mW)
200
Cu Foil
Zener Current
Iz
6
150
Printed circuit board 25 × 62 × 1.6t mm Material: Glass Epoxy Resin+Cu Foil
4
100
2
50
0 0 5 10 15 20 25 30 35 40
0 0 50 100 150 200
Zener Voltage
Vz (V)
Ambient Temperature Ta ( °C) Fig.2 Power Dissipation Vs. Ambient Temperature
Fig.1 Zener current Vs. Zener voltage
10
Nonrepetitive Surge Reverses Power PRSM (W)
4
……
