EEPW首页 | 器件索引 | 厂商列表 | IC替换 | 微缩略语 | 电路图查询
器件查询:
400万器件资料库等您来搜!
   首页 > HITACHI > HZU6.2L

HZU6.2L

器件名称: HZU6.2L
功能描述: Silicon Epitaxial Planar Zener Diode for Surge Absorb
文件大小: 28.31KB    共6页
生产厂商: HITACHI
下  载:    在线浏览   点击下载
简  介:HZU6.2L Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-776(Z) Rev 0 Feb. 1999 Features Lower reverse current leakage compared with conventional products. Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information Type No. HZU6.2L Laser Mark 62C Package Code URP Outline Cathode mark Mark 1 62C 2 1. Cathode 2. Anode HZU6.2L Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Note 1. See Fig.2. Symbol Pd Tj Tstg *1 Value 150 150 -55 to +150 Unit mW °C °C Electrical Characteristics (Ta = 25°C) Item Zener voltage Reverse current Dynamic resistance Symbol VZ IR rd Min 5.80 Typ Max 6.60 100 30 Unit V nA Test Condition I Z = 5 mA, 40ms pulse VR = 5.0V I Z = 5 mA 2 HZU6.2L Main Characteristic 10 10 (A) -2 250 Polyimide board 20hx15wx0.8t -3 200 10 Power Dissipation Pd (mW) -4 -5 3.0 1.5 Iz 10 150 1.5 unit: mm Zener Current 10 -6 10 -7 100 10 10 -8 50 -9 10 -10 0 1 2 3 4 5 6 7 8 0 0 50 100 150 200 Ambient Temperature Ta ( °C) Fig.2 Power Dissipation Vs. Ambient Temperature Zener Voltage Vz (V) Fig.1 Zener current Vs. Zener voltage 10 Nonrepetitive Surge Reverses Power PRSM (W) 4 PRSM t 10 3 Ta = 25°C nonrepetitive 10 2 10 1.0 10 -5 10 -4 10 -3 10 (s) -2 10 -1 1.0 Time t Fig.3 Surge Reverse Power Ratings 0.8 3 HZU6.2L Main Characteristic 10 Transient Thermal Impedance Z th (°C/W) 4 10 3 10 2 10 1.0 10 -2 ……
相关电子器件
器件名 功能描述 生产厂商
HZU6.2L Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI
《电子产品世界》杂志社 版权所有 北京东晓国际技术信息咨询有限公司
Copyright ©2002 ELECTRONIC ENGINEERING & PRODUCT WORLD. All rights reserved.
京ICP备12027778号-2