器件名称: HZU6.2Z
功能描述: Silicon Epitaxial Planar Zener Diode for Surge Absorb
文件大小: 153.95KB 共6页
简 介:HZU6.2Z
Silicon Epitaxial Planar Zener Diode for Surge Absorb
REJ03G1218-0200 (Previous: ADE-208-581A) Rev.2.00 Jun 16, 2005
Features
Low capacitance (C = 8.5 pF max) and can protect signal line from ESD. Ultra small Resin Package (URP) is suitable for surface mount design.
Ordering Information
Type No. HZU6.2Z Laser Mark 62Z Package Name URP Package Code (Previous Code) PTSP0002ZA-A (URP)
Pin Arrangement
Cathode mark Mark 1
62Z
2 1. Cathode 2. Anode
Rev.2.00 Jun 16, 2005 page 1 of 5
HZU6.2Z
Absolute Maximum Ratings
(Ta = 25°C)
Item Power dissipation Junction temperature Storage temperature Note: See Fig.2. Symbol Pd * Tj Tstg Value 200 150 55 to +150 Unit mW °C °C
Electrical Characteristics
(Ta = 25°C)
Item Zener voltage Reverse current Capacitance Dynamic resistance Symbol VZ IR C rd Min 5.90 — — — Typ — — 8.0 — Max 6.50 3 8.5 60 Unit V A pF Test Condition IZ = 5 mA, 40 ms pulse VR = 5.5 V VR = 0 V, f = 1 MHz IZ = 5 mA
Rev.2.00 Jun 16, 2005 page 2 of 5
HZU6.2Z
Main Characteristic
10-2 250
Polyimide board 20hx15wx0.8t
10-3
Zener Current IZ (A)
Power Dissipation Pd (mW)
200
3.0
1.5
150
1.5
unit: mm
10-4
100
10-5
50
10-6
0
2
4
6
8
10
0
0
50
100
150
Zener Voltage VZ (V) Fig.1 Zener current vs. Zener voltage
Ambient Temperature Ta (°C) Fig.2 Power Dissipation vs. Ambient Temperature
Nonrepetitive Surge Reverses Power PRSM (W)
104 PRSM t 10
3
Ta = 25°C nonrepetitive
102
10
1.0
10-5
10-4
10-3 Time t (s)
10-2
10-1
1.0
Fig.3 Sur……
