器件名称: KDV1470
功能描述: VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
文件大小: 36.98KB 共2页
简 介:SEMICONDUCTOR
TECHNICAL DATA
FM RADIO BAND TUNING APPLICATION. FEATURES
High Capacitance Ratio : C1V/C5V=5.0(Min.) Excellent C-V Characteristics. Variations of Capacitance Values is Little.
A
KDV1470
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
L
E B
L
DIM A
D
B C D E G H J K
MILLIMETERS _ 0.20 2.93 +
1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7
G
Small Package.
2
3
H
1
MAXIMUM RATING (Ta=25
CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range
)
SYMBOL VR Tj Tstg RATING 16 150 UNIT V
C N
P
P
L M N P
M 3
1. ANODE 1
-55 150
2. ANODE 2 3. CATHODE
2 1
K
SOT-23
CLASSIFICATION OF CAPACITANCE RATIO GRADE
GRADE A B C CAPACITANCE (C1V) 65.80 68.27 70.74 69.25 71.72 74.20
Type Name
UNIT
pF
Marking
Grade Lot No.
S3
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC Reverse Voltage Reverse Current SYMBOL VR IR C1V C2V Capacitance C3V C4.5V C5V Capacitance Ratio Series Resistance K rS IR=10 A VR=10V VR=1V, f=1MHz VR=2V, f=1MHz VR=3V, f=1MHz VR=4.5V, f=1MHz VR=5V, f=1MHz C1V/C5V, f=1MHz VR=1.5V, f=100MHz TEST CONDITION MIN. 16 65.8 12.0 5.0 TYP. 70 43 24 13.5 12.5 0.43 MAX. 50 74.2 14.8 0.5 pF UNIT V nA
2002. 6. 25
Revision No : 1
J
1/2
KDV1470
C-V
CAPACITANCE C (pF) 200
R
IR - VR
100n REVERSE CURRENT I R (A)
f=50MHz Ta=25C Ta=85 C
100
10n
Ta=55 C
50 30
1n
Ta=25 C
100p
10 0 1 2 3 4 5 REVERSE VOLTAGE V (V)R
10p 0 2 4 6 8 10 12 1……
