器件名称: KDV1471
功能描述: VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
文件大小: 71.17KB 共2页
简 介:SEMICONDUCTOR
TECHNICAL DATA
FM RADIO BAND TUNING APPLICATION. FEATURES
High Capacitance Ratio : C1V/C5V=5.0(Min.) Excellent C-V Characteristics. Variations of Capacitance Values is Little.
A
KDV1471
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
L
E B
L
DIM A
D B C D E G H J K
MILLIMETERS _ 0.20 2.93 +
1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 - 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7
G
Small Package.
2 H 1
3
MAXIMUM RATING (Ta=25)
CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range SYMBOL VR Tj Tstg RATING 16 150 -55150 UNIT V
C N
P
P
L M N P
M 3
1. ANODE
2. NC 3. CATHODE
2 1
K
SOT-23
GRADE A B C CAPACITANCE(CIV) 30.16~33.63 33.30~37.13 36.77~40.99
Type Name
UNIT
pF
Marking
Grade Lot No.
W3
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC Reverse Voltage Reverse Current Capacitance Capacitance Ratio Series Resistance SYMBOL VR IR C1V C4.5V K rS TEST CONDITION IR=10 A VR=10V VR=1V, f=1MHz VR=4.5V, f=1MHz C1V/C5V, f=1MHz VR=1.5V, f=100MHz MIN. 16 30.16 6.2 5.0 TYP. 35.60 7.7 0.8 MAX. 50 40.99 9.2 1.0 UNIT V nA pF
2001. 5. 28
Revision No : 1
J
1/2
KDV1471
CR - V
100 CAPACITANCE C (pF) 50 30 1n
f=1MHz
I R - VR
REVERSE CURRENT I R (A)
Ta=25 C
100p 10p 1p 100f 10f
Ta=85 C Ta=55 C Ta=25 C
10 5
0
1
2
3
4
5
0
2
4
6
8
10
12
14
16
REVERSE VOLTAGE VR (V)
REVERSE VOLTAGE VR (V)
Q - VR
500 300 FIGURE OF MERIT Q
Hz 0M z f=5 H 0M f=7 0MHz 0 f=1
rs - f……
