器件名称: KDV1472
功能描述: VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(FM RADIO BAND TUNING)
文件大小: 40.01KB 共2页
简 介:SEMICONDUCTOR
TECHNICAL DATA
FM RADIO BAND TUNING APPLICATION. FEATURES
High Capacitance Ratio : C1V/C5V=5.0(Min.) Excellent C-V Characteristics. Variations of Capacitance Values is Little. Small Package.
KDV1472
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK
B 1
G
K
E
A
H
2 D
J C I
MAXIMUM RATING (Ta=25
CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range
)
SYMBOL VR Tj Tstg RATING 16 150 -55 150 UNIT V
M M
DIM A B C D E F G H I J K L M
MILLIMETERS _ 0.1 2.50 + _ 0.05 1.25 + _ 0.05 0.90 + 0.30+0.06/-0.04 _ 0.05 1.70 + MIN 0.17 _ 0.03 0.126 + 0~0.1 1.0 MAX _ 0.05 0.15 + _ 0.05 0.4 + 2 +4/-2 4~6
1. ANODE 2. CATHODE
USC
GRADE A B C CAPACITANCE(CIV) 30.16~33.63 33.30~37.13 36.77~40.99 pF UNIT
Marking
Type Name
Grade
B
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC Reverse Voltage Reverse Current Capacitance Capacitance Ratio Series Resistance SYMBOL VR IR C1V C4.5V K rS TEST CONDITION IR=10 A VR=10V VR=1V, f=1MHz VR=4.5V, f=1MHz C1V/C5V, f=1MHz VR=1.5V, f=100MHz MIN. 16 30.16 6.2 5.0 TYP. 35.60 7.7 0.8 MAX. 50 40.99 pF 9.2 1.0 UNIT V nA
2002. 6. 25
Revision No : 2
F
L
1/2
KDV1472
C - VR
100
f=1MHz Ta=25 C
I R - VR
1n REVERSE CURRENT I R (A)
Ta=85 C
CAPACITANCE C (pF)
50 30
100p 10p 1p 100f 10f
Ta=55 C
Ta=25 C
10
5 0 1 2 3 4 5
0
2
4
6
8
10
12
14
16
REVERSE VOLTAGE VR (V)
REVERSE VOLTAGE VR (V)
QR - V
500
Ta=25 C
rs - f
1 SERIES RESISTANCE r s ()
VR=1.5V Ta=25 C
300 FIGURE OF MERIT……
