器件名称: KDV175E
功能描述: SILICON EPITAXIAL PIN TYPE DIODE
文件大小: 295.45KB 共2页
简 介:SEMICONDUCTOR
TECHNICAL DATA
VHF°≠UHF BAND RF ATTENUATOR APPLICATIONS. AGC FOR AM/FM TUNER.
CATHODE MARK
KDV175E
SILICON EPITAXIAL PIN TYPE DIODE
FEATURES
°§Low Capacitance : CT=0.25[pF] (Typ.) °§Low Series resistance : rS=7[ ] (Typ.). °§Designed for low Inter Modulation. °§Small Package : ESC.
C 1
E
2 D F
B
A
MAXIMUM RATING (Ta=25°… )
CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range SYMBOL VR IF Tj Tstg RATING 50 50 150 -55°≠150 UNIT V mA °… °…
1. ANODE 2. CATHODE
DIM A B C D E F
MILLIMETERS _ 0.10 1.60 + _ 0.10 1.20 + _ 0.10 0.80 + _ 0.05 0.30 + _ 0.10 0.60 + _ 0.05 0.13 +
ESC
ELECTRICAL CHARACTERISTICS (Ta=25°… )
CHARACTERISTIC Reverse Voltage Reverse Current Forward Voltage Total Capacitance Series Resistance SYMBOL VR IR VF CT rs TEST CONDITION IR=10A VR=50V VF=50mA VR=50V, f=1MHz IF=10mA, f=100MHz MIN. 50 TYP. 0.95 0.25 7.0 MAX. 0.1 UNIT V A V pF
Marking
Type Name
UE
2002. 6. 14
Revision No : 1
1/2
KDV175E
C T - VR
2 TOTAL CAPACITANCE C T (pF) 1 SERIES RESISTANCE r s ()
f=1MHz Ta=25 C
rs - IF
2k 1k 500 300 0.4 100 50 30 10 5 2 10 100
f=0.2GHz 1.0 0.8 0.6 0.4 0.6 0.8 f=0.2GHz Ta=25 C
0.5 0.3
1.0
0.1 1 3 5 10 30 5 0
1m
10m
50m
REVERSE VOLTAGE VR (V)
FORWARD CURRENT I F (A)
2002. 6. 14
Revision No : 1
2/2
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