器件名称: KDV239E
功能描述: VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF RADIO)
文件大小: 70.46KB 共2页
简 介:SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF RADIO. FEATURES
Small Package. (ESC Package)
KDV239E
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK
Ultra Low Series Resistance : rS=0.44(Typ.)
C 1
E
2
MAXIMUM RATING (Ta=25)
CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range SYMBOL VR Tj Tstg RATING 15 150 -55150 UNIT V
D F
B
A
1. ANODE 2. CATHODE
DIM A B C D E F
MILLIMETERS _ 0.10 1.60 + _ 0.10 1.20 + _ 0.10 0.80 + _ 0.05 0.30 + _ 0.10 0.60 + _ 0.05 0.13 +
ESC
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC Reverse Voltage Reverse Current Capacitance Capacitance Ratio Series Resistance SYMBOL VR IR C2V C10V K rS IR=1 A VR=15V VR=2V, f=1MHz VR=10V, f=1MHz C2V/C10V, f=1MHz VR=1V, f=470MHz TEST CONDITION MIN. 15 3.8 1.5 2.0 TYP. 4.25 1.75 2.4 0.44 MAX. 3 4.7 2.0 0.6 UNIT V nA pF
Marking
Type Name
UJ
2000. 3. 7
Revision No : 0
1/2
KDV239E
CV - VR
10 REVERSE CURRENT IR (A) CAPACITANCE C V (pF) 7 5 3
f=1MHz Ta=25 C
I R - VR
100p
10p
Ta=80 C
1p
Ta=60 C Ta=25 C
0.1p
1 0 4 8 12 16 REVERSE VOLTAGE V R (V)
0.01p 0 5 10 15 20 25
REVERSE VOLTAGE VR (V)
r s - VR
0.8 SERIES RESISTANCE r s () SERIES RESISTANCE rs ()
Ta=25 C f=100MHz
rs - f
1.0 0.8 0.6 0.4 0.2 0 20
VR=1V Ta=25 C
0.6
0.4
0.2
0 1 3 5 10 20
50
100
300
500
1K
REVERSE VOLTAGE VR (V)
FREQUENCY f (MHz)
C - Ta
3 CAPACITANCE CHANGE RATIO C (%)
f=1MHz
VR=1V VR=2V VR=6V VR=10V
2 1 0 -1 -2 -3 -50
NOTE :
C(%) =
C(Ta) - C(25) C(25)
`100
-25……
