器件名称: KDV310E
功能描述: VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV Tuning
文件大小: 388.75KB 共2页
简 介:SEMICONDUCTOR
TECHNICAL DATA
TV Tuning. FEATURES
Low Series Resistance : rs=1.1 (Max.) Small Package : ESC.
KDV310E
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK
High Capacitance Ratio : C2V/C25V=17.0(Min.)
C 1
E
2 D F
MAXIMUM RATING (Ta=25
CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range
)
SYMBOL VR Tj Tstg RATING 34 150 -55 150 UNIT V
1. ANODE 2. CATHODE
B
A
DIM A B C D E F
MILLIMETERS _ 0.10 1.60 + _ 0.10 1.20 + _ 0.10 0.80 + _ 0.05 0.30 + _ 0.10 0.60 + _ 0.05 0.13 +
ESC
Marking
Type Name
VD
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC Reverse Current SYMBOL IR1 IR2 C2V C25V C2V/C25V rS VR=32V VR=32V, Ta=60 VR=2V, f=1MHz VR=25V, f=1MHz VR=5V, f=470MHz TEST CONDITION MIN. 47.0 2.65 17.0 TYP. MAX. 10 100 53.0 3.0 1.1 UNIT nA
Capacitance Capacitance Ratio Series Resistance
pF
Note : Available in matched group for capacitance to 2.0%. C(Max.)-C(Min.) C(Min.) (VR=2~25V) 0.02
2004. 4. 20
Revision No : 0
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KDV310E
I R - VR
10 REVERSE CURRENT I R (A)
-10
C T - VR
80 TOTAL CAPACITANCE CT (pF)
f=1MHz
10
-11
60
40
10
-12
20
10
-13
0
10
20
30
40
0 1 10 REVERSE VOLTAGE VR (V) 50
REVERSE VOLTAGE VR (V)
r s - VR
1.0 SERIES RESISTANCE rs ()
f=470MHz
(LOG CT ) / (LOG VR ) - VR
0 (LOG CT) / (LOG VR)
0.8
-1.0
0.6
-2.0
0.4
0.2 1 3 5 10 30 REVERSE VOLTAGE VR (V)
-3.0 1 10 REVERSE VOLTAGE VR (V) 50
2004. 4. 20
Revision No : 0
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