器件名称: KRC645T
功能描述: EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
文件大小: 69.37KB 共5页
简 介:SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPPLICATION. FEATURES
With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. High Output Current : 800mA.
A F
KRC641T~KRC646T
EPITAXIAL PLANAR NPN TRANSISTOR
E B 1 5
DIM MILLIMETERS _ 0.2 A 2.9 +
B C D E F G H I J K L 1.6+0.2/-0.1 _ 0.05 0.70 + _ 0.1 0.4 + 2.8+0.2/-0.3 _ 0.2 1.9 + 0.95 _ 0.05 0.16 + 0.00-0.10 0.25+0.25/-0.15 0.60 0.55
G
2
3
4
G
C
L
EQUIVALENT CIRCUIT
OUT R1 R2
J
J
H
TYPE NO. KRC641T
R1 (k ) 1 2.2 4.7 10 1 2.2
R2 (k ) 1 2.2 4.7 10 10 10
IN
KRC642T KRC643T KRC644T
COMMON(+)
1. Q 1 IN (BASE) 2. Q 1, Q 2 COMMON (EMITTER) 3. Q 2 IN (BASE) 4. Q 2 OUT (COLLECTOR) 5. Q 1 OUT (COLLECTOR)
KRC645T KRC646T
TSV
EQUIVALENT CIRCUIT (TOP VIEW)
5 4
Q1
D
MAXIMUM RATING (Ta=25
Output Voltage
)
SYMBOL KRC641T~646T KRC641T KRC642T KRC643T KRC644T KRC645T KRC646T VO
1
CHARACTERISTIC
RATING 50 10, -10 12, -10 20, -10 30, -10 10, -5 12, -6
Input Voltage
VI
Output Current Power Dissipation Junction Temperature Storage Temperature Range * Package mounted on a ceramic board (600 0.8 ) KRC641T~646T
IO PD * Tj Tstg
800 0.9 150 -55 150
Marking
5 4
MARK SPEC
TYPE MARK KRC641T NA KRC642T NB KRC643T NC KRC644T ND KRC645T NE KRC646T NF
1 2 3
Type Name
2002. 7. 10
Revision No : 2
I
Q2
2
3
UNIT V
V
mA W
Lot No.
1/5
KRC641T~KRC646T
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC Output Cu……
