器件名称: KRC654E
功能描述: EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
文件大小: 113.11KB 共6页
简 介:SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
KRC651E~KRC656E
EPITAXIAL PLANAR NPN TRANSISTOR
B
FEATURES
With Built-in Bias Resistors. Reduce a Quantity of Parts and Manufacturing Process. High Packing Density.
A1 A C
B1
Simplify Circuit Design.
1
5
DIM A
A1 B
2
3
4
B1 C D H J P
MILLIMETERS _ 0.05 1.6 + _ 0.05 1.0 + _ 0.05 1.6 + _ 0.05 1.2+
0.50 _ 0.05 0.2 + _ 0.05 0.5 + _ 0.05 0.12 + 5
C
EQUIVALENT CIRCUIT
OUT R1 R2
BIAS RESISTOR VALUES
TYPE NO. KRC651E R1(k) 4.7 10 22 47 2.2 4.7 R2(k) 4.7 10 22 47 47 47
H
P
P
IN
KRC652E KRC653E KRC654E
COMMON
1. Q 1 IN (BASE) 2. Q 1, Q 2 COMMON (EMITTER) 3. Q 2 IN (BASE) 4. Q 2 OUT (COLLECTOR) 5. Q 1 OUT (COLLECTOR)
KRC655E KRC656E
TESV
EQUIVALENT CIRCUIT (TOP VIEW)
5 4
Q1
J
D
Q2
MAXIMUM RATING (Ta=25)
CHARACTERISTIC Output Voltage KRC651E656E KRC651E KRC652E Input Voltage KRC653E KRC654E KRC655E KRC656E Output Current Power Dissipation Junction Temperature Storage Temperature Range * Total Rating. KRC651E656E IO PD* Tj Tstg VI SYMBOL VO
1
2
3
RATING 50 20, -10 30, -10 40, -10 40, -10 12, -5 20, -5 100 200 150 -55150
UNIT V
V
mA mW
Type Name
Marking
5 4
MARK SPEC
TYPE MARK KRC651E NA KRC652E NB KRC653E NC KRC654E ND KRC655E NE KRC656E NF
1 2 3
2002. 1. 24
Revision No : 1
1/6
KRC651E~KRC656E
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC Output Cut-off Current KRC651E656E KRC651E KRC652E KRC653E DC Current Gain KRC654E KRC655E KRC656E Outp……
