器件名称: KRC669E
功能描述: EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
文件大小: 69.21KB 共6页
简 介:SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION
KRC666E~KRC672E
EPITAXIAL PLANAR NPN TRANSISTOR
B
FEATURES
With Built-in Bias Resistors. Reduce a Quantity of Parts and Manufacturing Process.
A1 A C
B1
Simplify Circuit Design.
1
5
DIM A
A1 B
2
3
4
B1 C D H J P
MILLIMETERS _ 0.05 1.6 + _ 0.05 1.0 + _ 0.05 1.6 + _ 0.05 1.2+
0.50 _ 0.05 0.2 + _ 0.05 0.5 +
C
EQUIVALENT CIRCUIT
OUT R1 R2
D
P
P
TYPE NO. KRC666E
R1(k 1 2.2 2.2 4.7 10 47 100
)
R2(k 10 2.2 10 10 4.7 10 100
)
H J
_ 0.05 0.12 + 5
IN
KRC667E KRC668E KRC669E
COMMON
1. Q 1 IN (BASE) 2. Q 1, Q 2 COMMON (EMITTER) 3. Q 2 IN (BASE) 4. Q 2 OUT (COLLECTOR) 5. Q 1 OUT (COLLECTOR)
KRC670E KRC671E KRC672E
TESV
EQUIVALENT CIRCUIT (TOP VIEW)
5 4
Q1
Q2
MAXIMUM RATING (Ta=25
Output Voltage
)
SYMBOL KRC666E~672E KRC666E KRC667E KRC668E VO
1
2
3
CHARACTERISTIC
RATING 50 10, -5 12, -10 12,-5
UNIT V
Input Voltage
KRC669E KRC670E KRC671E KRC672E
VI
20, -7 30, -10 40, -15 40, -10
V
Output Current Power Dissipation Junction Temperature Storage Temperature Range * Total Rating. KRC666E~672E
IO PD * Tj Tstg
5
100 200 150 -55 150
mA mW
Marking
4
Type Name
MARK SPEC
TYPE MARK KRC666E KRC667E KRC668E KRC669E KRC670E KRC671E KRC672E N2 N4 N5 N6 N7 N8 N9
1 2 3
2002. 7. 10
Revision No : 2
1/6
KRC666E~KRC672E
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC Output Cut-off Current KRC666E~672E KRC666E KRC667E KRC668E DC Current Gain KRC669E KR……
