器件名称: KRC684T
功能描述: EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING)
文件大小: 387.09KB 共2页
简 介:SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES
High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ.) (IB=5mA) With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process.
C A F
KRC681T~KRC686T
EPITAXIAL PLANAR NPN TRANSISTOR
E B 1 5
DIM MILLIMETERS _ 0.2 A 2.9 +
B C D E F G H I J K L 1.6+0.2/-0.1 _ 0.05 0.70 + _ 0.1 0.4 + 2.8+0.2/-0.3 _ 0.2 1.9 + 0.95 _ 0.05 0.16 + 0.00-0.10 0.25+0.25/-0.15 0.60 0.55
G
2
3
4
G
J
C R1
5
4
1. Q 1 IN (BASE) 2. Q 1, Q 2 COMMON (EMITTER) 3. Q 2 IN (BASE) 4. Q 2 OUT (COLLECTOR) 5. Q 1 OUT (COLLECTOR)
B
Q1
Q2
E
1
2
3
MAXIMUM RATING (Ta=25
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range
)
SYMBOL VCBO VCEO VEBO IC PC * Tj Tstg 0.8 ) RATING 50 20 25 300 0.9 150 -55 150 UNIT V V V mA W
CHARACTERISTIC
* Package mounted on a ceramic board (600
MARK SPEC
TYPE KRC681T KRC682T KRC683T KRC684T KRC685T KRC686T hFE classification B MQB MRB MSB MTB MUB MVB
1 2 3
Marking
h FE Rank Type Name
5 4
2002. 12. 5
Revision No : 3
I
EQUIVALENT CIRCUIT
EQUIVALENT CIRCUIT (TOP VIEW)
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TSV
Lot No.
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KRC681T~KRC686T
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Brea……
