器件名称: 1N5384B
功能描述: GLASS PASSIVATED JUNCTION SILICON ZENER DIODE
文件大小: 267.56KB 共5页
简 介:1N5348B THRU 1N5388B
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 5.0 Watts
FEATURES l l l l l l l Low profile package Built-in strain relief Glass passivated junction Low inductance Typical ID less than 1 A above 13V High temperature soldering : DO-201AE
260 /10 seconds at terminals Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
MECHANICAL DATA Case: JEDEC DO-201AE Molded plastic over passivated junction Terminals: Solder plated, solderable per MIL-STD-750, method 2026 Standard Packaging: 52mm tape Weight: 0.04 ounce, 1.1 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. DC Power Dissipation @ TL=75 , Measure at Zero Lead Length(Fig. 1) Derate above 75 (Note 1) Peak forward Surge Current 8.3ms single half sine-wave superimposed on rated load(JEDEC Method) (Note 1,2) Operating Junction and Storage Temperature Range NOTES: 1. Mounted on 8.0mm copper pads to each terminal. 2. 8.3ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum.
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SYMBOL PD IFSM TJ,TSTG
VALUE 5.0 40.0 See Fig. 5 -55 to +150
UNITS Watts mW/ Amps
1N5348B THRU 1N5388B
ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted, VF=1.2 Max @ IF=1A for all types.
Nominal Zener Type No. (Note 1.) Voltage Vz @ IZT volts (Note 2.) 1N5348B 1N5349B 1N5350B 1N5351B 1N5352B 1N5353B 1N5354B 1N5355B 1N5356B 1N5357B 1N5358B 1N5359B 1N5360B 1N5361B ……
