器件名称: MJE15034_06
功能描述: 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 350 VOLTS, 50 WATTS
文件大小: 74.29KB 共5页
简 介:MJE15034 NPN, MJE15035 PNP
Preferred Device
Complementary Silicon Plastic Power Transistors
TO220, NPN & PNP Devices
Complementary silicon plastic power transistors are designed for use as highfrequency drivers in audio amplifiers.
Features
hFE = 100 (Min) @ IC = 0.5 Adc CollectorEmitter Sustaining Voltage High Current Gain Bandwidth Product TO220AB Compact Package Epoxy meets UL 94 V0 @ 0.125 in ESD Ratings: Machine Model: C PbFree Packages are Available*
MAXIMUM RATINGS
Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Collector Current Continuous Peak Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C Total Power Dissipation @ TA = 25_C Derate above 25_C Operating and Storage Junction Temperature Range Symbol VCEO VCB VEB IC IB PD PD TJ, Tstg Value 350 350 5.0 4.0 8.0 1.0 50 0.40 2.0 0.016 –65 to +150 Unit Vdc Vdc Vdc Adc Adc W W/_C W W/_C _C
= 10 (Min) @ IC = 2.0 Adc
4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 350 VOLTS, 50 WATTS
VCEO(sus) = 350 Vdc (Min) MJE15034, MJE15035 fT = 30 MHz (Min) @ IC = 500 mAdc
TO220AB CASE 221A STYLE 1
Human Body Model: 3B
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, JunctiontoCase Thermal Resistance, JunctiontoAmbient Symbol RqJC RqJA Max 2.5 62.5 Unit _C/W _C/W
ORDERING INFORMATION
Device MJE15034 Package TO220AB Shipping 50 Units / Rail
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individua……
