器件名称: N04L1630C2BB2
功能描述: 4Mb Ultra-Low Power Asynchronous CMOS SRAMs 256K
文件大小: 194.63KB 共12页
简 介:AMI Semiconductor, Inc.
ULP Memory Solutions 670 North McCarthy Blvd. Suite 220 Milpitas, CA 95035 PH: 408-935-7777, FAX: 408-935-7770
N04L1630C2B
Advance Information
4Mb Ultra-Low Power Asynchronous CMOS SRAMs
256K × 16 bit POWER SAVER TECHNOLOGY TM Overview
The N04L1630C2B is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using AMI Semiconductor’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently and can also be used to deselect the device. The N04L1630C2B is optimized for the ultimate in low power and is suited for various applications where ultra-lowpower is critical such as medical applications, battery backup and power sensitive hand-held devices. The unique page mode operation saves operating power while improving the performance over standard SRAMs. The device can operate over a very wide temperature range of -40oC to +85oC and is available in JEDEC standard packages compatible with other standard 256Kb x 16 SRAMs.
Features
Wide Power Supply Range 2.7 to 3.6 Volts Very low standby current 1uA (Typical) Very low operating current 2.0mA at 1s (Typical) Very low Page Mode operating current 0.8mA at 1s (Typical) Simple ……
