器件名称: BUZ10S2
功能描述: SIPMOS Power Transistor (N channel Enhancement mode Avala
文件大小: 132.3KB 共9页
简 介:BUZ 10 S2
Not for new design
SIPMOS Power Transistor
N channel Enhancement mode Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 10 S2
VDS
60 V
ID
23 A
RDS(on)
0.07
Package TO-220 AB
Ordering Code C67078-S1300-A7
Maximum Ratings Parameter Continuous drain current Symbol Values 23 Unit A
ID IDpuls
92
TC = 26 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse
IAR EAR EAS
23 1.3 mJ
ID = 23 A, VDD = 25 V, RGS = 25 L = 15.1 H, Tj = 25 °C
Gate source voltage Power dissipation 8
VGS Ptot
± 20 75
V W
TC = 25 °C
Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1
Tj Tstg RthJC RthJA
-55 ... + 150 -55 ... + 150 ≤ 1.67 ≤ 75 E 55 / 150 / 56
°C K/W
Semiconductor Group
07/96
BUZ 10 S2
Not for new design
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
60 3 0.1 10 10 0.05 4
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
2.1
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
1 100
A
VDS = 60 V, VGS = 0 V, Tj = 25 °C VDS = 60 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
IGSS
100
nA 0.07
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
RDS(on)
VGS = 10 V, ID = 14 A
……
