器件名称: MSAFA1N100P3
功能描述: N-Channel enhancement mode high density
文件大小: 44.69KB 共2页
简 介:Santa Ana Division
MSAFA1N100P3
MOSFET Device
Features
Low On-State resistance Avalanche and Surge Rated High Frequency Switching Ultra low Leakage Current UIS rated Available with Lot Acceptance Testing “L” Suffix Available with “J” leads
1 Amp 1000 V N-Channel
enhancement mode high density
Applications
Implantable Cardio Defibrillator Testing and Screening (per lot) 100% Testing at 25C, DC parameters Sample Test (22/0), AC, Hot and Cold Parameters (min/max limits) Maximum Ratings
SYMBOL VDSS VGS ID1 ID2 IDM1 IAR EAR EAS TJ, TSTG PARAMETER Drain - Source Voltage Gate - Source Voltage Continuous Drain Current @ TC = 25 Continuous Drain Current @ TC = 100 Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy Single Pulse Avalanche Energy Operating and Storage: Junction Temperature Range
VALUE 1000 ±20 1 0.8 4 1 TBD TBD -55 to 150
UNIT Volts Volts Amps Amps Amps Amps mJ mJ C
Static Electrical Characteristics
SYMBOL BVDSS VGS(TH)2 VGS(TH)1 RDS(ON)1 RDS(ON)2 RDS(ON)3 RDS(ON)4 RDS(ON)5 IDSS1 IDSS2 IDSS3 IGSS1 IGSS2 IGSS3 CHARACTERISTIC / TEST CONDITIONS MIN Drain - Source Breakdown Voltage (VGS = 0V, ID = 0.25mA) 1000 Gate Threshold Voltage (VGS= VDS, ID = 1 mA, TJ = 37C) Gate Threshold Voltage (VGS= VDS, ID = 1 mA, TJ = 25C) 2 Drain – Source On-State Resistance (VGS = 10V, ID = ID1, TJ = 25C) Drain – Source On-State Resistance (VGS = 7V, ID = 5…150 mA, TJ= 37C) Drain – Source On-State Resistance (VGS = 7V, ID = 5…150 mA, TJ= 25C) Drain – Source On-St……
