器件名称: P01N02LJA
功能描述: N-Channel Logic Level Enhancement Mode Field Effect Transistor(Pre
文件大小: 110.64KB 共3页
简 介:NIKO-SEM
N-Channel Logic Level Enhancement Mode Field Effect Transistor
( Preliminary)
P01N02LJA
J-LEAD8
D
PRODUCT SUMMARY V(BR)DSS 25V RDS(ON) 70mΩ ID 1.2A 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE
G S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation
1
SYMBOL VGS
LIMITS ±15 1.2 1.0 12 0.6 0.5 -55 to 150 275
UNITS V
TC = 25 °C TC = 100 °C TC = 25 °C TC = 100 °C
ID IDM PD Tj, Tstg TL
A
W
Operating Junction & Storage Temperature Range Lead Temperature ( /16” from case for 10 sec.) THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient
1 1
°C
SYMBOL RθJC RθJA
TYPICAL
MAXIMUM 65 230
UNITS °C / W
Pulse width limited by maximum junction temperature.
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250 A VDS = VGS, ID = 250 A VDS = 0V, VGS = ±15V VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125 °C VDS = 10V, VGS = 10V VGS = 7V, ID = 1.2A VGS = 10V, ID = 1.2A VDS = 20V, ID = 1.2A 1.2 120 70 16 180 120 25 0.7 1.0 2.5 ±250 25 250 V nA A A mΩ S LIMITS UNIT MIN TYP MAX
1
AUG-30-2002
NIKO-SEM
N-Channel Logic Level Enhance……
