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P01N02LMB

器件名称: P01N02LMB
功能描述: N-Channel Logic Level Enhancement Mode Field Effect Transistor
文件大小: 45.13KB    共3页
生产厂商: ETC
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简  介:NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P01N02LMB SOT-23 (M3) D PRODUCT SUMMARY V(BR)DSS 25V RDS(ON) 180mΩ ID 1.2A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation 1 SYMBOL VGS LIMITS ±15 1.2 1.0 12 0.6 0.5 -55 to 150 275 UNITS V TC = 25 °C TC = 100 °C ID IDM A TC = 25 °C TC = 100 °C PD Tj, Tstg TL W Operating Junction & Storage Temperature Range Lead Temperature ( /16” from case for 10 sec.) THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1 1 °C SYMBOL RθJC RθJA TYPICAL MAXIMUM 65 230 UNITS °C / W Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 LIMITS UNIT MIN TYP MAX V(BR)DSS VGS(th) IGSS IDSS ID(ON) 1 VGS = 0V, ID = 250 A VDS = VGS, ID = 250 A VDS = 0V, VGS = ±15V VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125 °C VDS = 10V, VGS = 10V VGS = 7V, ID = 1.2A VGS = 10V, ID = 1.2A VDS = 20V, ID = 1.2A 25 0.7 1.0 2.5 ±250 25 250 1.2 220 180 16 250 220 V nA A A mΩ S Drain-Source On-State Resistance Forward Transconductance 1 RDS(ON) gfs 1 AUG-18-2001 NIKO-SEM N-Channel Logic Level Enhancement Mo……
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P01N02LMB N-Channel Logic Level Enhancement Mode Field Effect Transistor ETC
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