器件名称: STD15N06L
功能描述: N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
文件大小: 140.04KB 共10页
简 介:STD15N06L
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
TYPE STD15N06L
s s s s s s s s
V DSS 60 V
R DS( on) < 0.1
ID 15 A
s
s
TYPICAL RDS(on) = 0.075 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”)
3 1
IPAK TO-251 (Suffix ”-1”)
2
1
DPAK TO-252
3
(Suffix ”T4”)
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)
s
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VD S V DG R V GS ID ID ID M( ) P tot T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 o C Derating Factor Storage Temperature Max. Operating Junction Temperature
o o
Value 60 60 ± 15 15 10 60 50 0.33 -65 to 175 175
Unit V V V A A A W W/o C
o o
C C
() Pulse width limited by safe operating area
February 1995
1/10
STD15N06L
THERMAL DATA
R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambien……
