器件名称: STK0602U
功能描述: N-Channel Enhancement-Mode MOSFET
文件大小: 261.93KB 共5页
简 介:.
Semiconductor
STK0602U
N-Channel Enhancement-Mode MOSFET
Description
High speed switching application.
Features
High density cell design for low RDS(ON). Voltage controlled small signal switch Include Zener protection for ESD ruggedness.
Ordering Information
Type NO. STK0602U Marking K62 Package Code SOT-323
Outline Dimensions
unit : mm
2.0~2.2 1.2~1.3
1
1.8~2.2 1.2~1.4
3
0.2~0.4
2
0.8~1.0
0~0.1
0.1 Min.
0.1~0.2
PIN Connections 1. Gate 2. Source 3. Drain
KST-3068-000
1
STK0602U
Absolute maximum ratings
Characteristic
Drain-Source voltage Gate-Source voltage Maximum Drain current Pulsed Drain Current Drain Power dissipation Operating Junction and Storage temperature range
(Ta=25°C)
Symbol
VDSS VGS ID IDP PD TJ , Tstg
Rating
60 ±8 200 800 200 -55~150
Unit
V V mA mA mW °C
Electrical Characteristics
Characteristic
Drian-Source breakdown voltage Gate-Threshold voltage Zero Gate voltage drain current Gate-body leakage Drain-Source on-resistance Forward transconductance Input capacitance Output capacitance Reverse Transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
(Ta=25°C)
Symbol
BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf
Test Condition
ID=10A, VGS=0 ID=1A, VDS=5V VDS=60V, VGS=0 VDS=0V, VGS=±6V VGS=5V, ID=10mA VGS=10V, ID=10mA VDS=5V, ID=20mA VDS=5V, VGS=0, f=1MHz
Min. Typ. Max.
60 0.8 20 2.5 2.0 65 26 20 10 150 1.8 1.0 ±1.0 6.0 4.0 -
Unit
V V A A mS pF
VDD=5V, ID=10mA VGS=5V RL=500
240……
