器件名称: STK596UF
功能描述: N-Channel Junction FET
文件大小: 343.1KB 共5页
简 介:Semiconductor
STK596UF
N-Channel Junction FET
Description
Capacitor Microphone application
Features
Especially suited for use in audio, telephone capacitor microphones Excellent voltage characteristic Excellent transient characteristic
Ordering Information
Type NO. STK596UF Marking J□ □:IDSS Rank Package Code SOT-323F
Outline Dimensions
unit :
mm
2.1±0.1 0.30~0.40 0.70-0.15 0~0.1
+0.1
1.30±0.1
1.30 BSC
2.0±0.1
1 3 2
0.11±0.05
PIN Connections 1. Drain 2. Source 3. Gate
KST-3063-001
1
STK596UF
Absolute maximum ratings
Characteristic
Gate-Drain voltage Gate Current Drain Current Power dissipation Junction Temperature Storage Temperature range
(Ta=25°C)
Symbol
VGDO IG ID PD TJ Tstg
Rating
-20 10 1 100 150 -55~150
Unit
V mA mA mW °C °C
Electrical Characteristics
Characteristic
Gate-drain breakdown voltage Cutoff voltage Zero Voltage Drain current Forward transfer admittance Input capacitance Reverse Transfer capacitance Output Noise Voltage
(Ta=25°C)
Symbol
V(BR)GDO VGS(off) IDSS ｜yfs｜ Ciss Crss VNO
Test Condition
IG=-100A VDS=5V, ID=1 VDS=5V, VGS=0 VDS=5V, VGS=0, f=1KHz VDS=5V, VGS=0, f=1MHz VDS=5V, VGS=0, f=1MHz VIN=０, A CURVE
Min. Typ. Max.
-20 -0.6 100 0.4 1.2 3.5 0.65 -１１０ -1.5 800
Unit
V V A mS pF pF dB
IDSS Classification
Classification IDSS[] A 100 ~ 170 B 150 ~ 240 C 210 ~ 350 D 320 ~ 480 E 440 ~ 800
Noise Voltage Test Circuit
VCC＝＋４．５V 1kΩ Cin=15p
JIS A
V
VTVM
KST-3063-001
2
STK596UF
Electrical Characteristic Curves
Fig. 1 ID - V……
