器件名称: STK7002U
功能描述: N-Channel Enhancement-Mode MOSFET
文件大小: 300.34KB 共5页
简 介:Semiconductor
STK7002U
N-Channel Enhancement-Mode MOSFET
Description
High speed switching application.
Features
High density cell design for low RDS(ON). Voltage controlled small signal switch High saturation current capability.
Ordering Information
Type NO. STK7002U Marking K72 Package Code SOT-323
Outline Dimensions
2.0~2.2 1.2~1.3
unit : mm
1
1.8~2.2 1.2~1.4
3
0.2~0.4
2
0.8~1.0
0~0.1
0.1 Min.
0.1~0.2
PIN Connections 1. Gate 2. Source 3. Drain
KST-3069-002
1
STK7002U
Absolute maximum ratings
Characteristic
Drain-Source voltage Gate-Source voltage Maximum Drain current Pulsed Drain Current Power Dissipation Maximum Junction-to-Ambient Operating Junction and Storage temperature range
* PW ≤ 10 , Duty cycle ≤ 1%
(Ta=25°C)
Symbol
VDSS VGS ID IDP * PD RthJA TJ , Tstg
Ratings
60 ±20 115 800 200 625 -55~150
Unit
V V mA mA mW °C/W °C
Electrical Characteristics
Characteristic
Drian-Source breakdown voltage Gate-Threshold voltage Zero Gate voltage drain current Gate-body leakage Drain-Source on-resistance Forward transconductance Input capacitance Output capacitance Reverse Transfer capacitance Turn-on time Turn-off time * PW ≤ 300 , Duty cycle ≤ 1%
(Ta=25°C)
Symbol
BVDSS VGS(th) IDSS IGSS RDS(ON) * gfs Ciss Coss Crss tON tOFF
Test Condition
ID=10A, VGS=0 ID=0.25mA, VDS=VGS VDS=60V, VGS=0 VDS=0V, VGS=±20V VGS=5V, ID=50mA VGS=10V, ID=500mA VDS=10V, ID=0.2A VDS=25V, VGS=0, f=1MHz
Min. Typ. Max.
60 1 80 2.0 3.2 2.4 22 11 2 7 11 2.5 1 ±100 7.5 7.5 50 25 5 2……
