器件名称: SUF622EF
功能描述: N-Ch/P-Ch Enhancement-Mode MOSFET
文件大小: 397.51KB 共5页
简 介:Semiconductor
SUF622EF
N-Ch/P-Ch Enhancement-Mode MOSFET
Description
High speed switching application. Analog switch application.
Features
STK1828 Chip and STJ828 Chip in SOT-563F Package Low threshold voltage High speed.
Ordering Information
Type NO. SUF622EF Marking HX Package Code SOT-563F
Outline Dimensions
unit :
mm
3
2
1
Q2
Q1
4
5
6
PIN Connections 1. Source 1 2. Gate 1 3. Drain 2 4. Source 2 5. Gate 2 6. Drain1
KST-J018-000
1
SUF622EF
Absolute maximum ratings
Characteristic
Drain-Source voltage Gate-Source voltage DC Drain current Drain Power dissipation Channel temperature Storage temperature range
(Ta=25°C)
Symbol
VDS VGSS ID PD Tch Tstg
Ratings
20 10 50 100 150 -55~150 -20 -7 -50
Unit
V V mA mW °C °C
Electrical Characteristics (Q1:N-CH)
Characteristic
Drian-Source breakdown voltage Gate-Threshold voltage Drain cut-off current Gate leakage current Drain-Source on-resistance Forward transfer admittance Input capacitance Output capacitance Reverse Transfer capacitance Turn-on time Turn-off time
(Ta=25°C)
Symbol
BVDSS Vth IDSS IGSS RDS(ON) ｜Yfs｜ Ciss Coss Crss ton toff
Test Condition
ID=100A, VGS=0 ID=0.1mA, VDS=3V VDS=20V, VGS=0 VGS=10V, VDS=0 VGS=2.5V, ID=10mA VDS=3V, ID=10mA VDS=3V, VGS=0, f=1MHz VDS=3V, VGS=0, f=1MHz VDS=3V, VGS=0, f=1MHz VDD=3V, ID=10mA VGEN=0~2.5V VDD=3V, ID=10mA VGEN=0~2.5V
Min. Typ. Max.
20 0.5 1.5 1 1 20 20 5.5 6.5 1.6 0.14 0.14 40
Unit
V V A A mS pF pF pF
Electrical Characteristics (Q2:P-CH)
Characteristi……
