器件名称: WFF830
功能描述: N-Channel MOSFET
文件大小: 830.63KB 共7页
简 介:Wisdom Semiconductor
WFF830
N-Channel MOSFET
Features
■ ■ ■ ■ ■
RDS(on) (Max 1.4 )@VGS=10V Gate Charge (Typical 25nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C)
Symbol
{
2. Drain
●
1. Gate {
▲
● ●
{
3. Source
General Description
This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterruped power supply, motor control.
TO-220F
1
2
3
Absolute Maximum Ratings (* Drain current limited by junction temperature)
Symbol
VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
(Note 2) (Note 1) (Note 3) (Note 1)
Parameter
Value
500 5.0* 3.0* 20*
Units
V A A A V mJ mJ V/ns W W/°C °C °C
±30
292 8.75 5.5 38 0.3 - 55 ~ 150 300
Thermal Characteristics
Symbol
RθJC RθJA
Parameter
Thermal Resistance, Junction-to-C……
