器件名称: MJE13003-TO-126
功能描述: NPN EPITAXIAL SILICON TRANSISTOR
文件大小: 192.64KB 共7页
简 介:UNISONIC TECHNOLOGIES CO., LTD MJE13003
NPN SILICON POWER TRANSISTORS
DESCRIPTION
These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE .
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NPN EPITAXIAL SILICON TRANSISTOR
FEATURES
* Reverse Biased SOA with Inductive Load @ Tc=100 * Inductive Switching Matrix 0.5 ~ 1.5 Amp, 25 and 100 Typical tc = 290ns @ 1A, 100 . * 700V Blocking Capability
TO-126
APPLICATIONS
* Switching Regulator’s, Inverters * Motor Controls * Solenoid/Relay drivers * Deflection circuits
*Pb-free plating product number: MJE13003L
ORDERING INFORMATION Normal Order Number Lead Free Plating Package
TO-126
MJE13003-x-T60-F-K MJE13003L-x-T60-F-K Note: x: Rank, refer to Classification of hFE1.
Pin Assignment 1 2 3 B C E
Packing
Bulk
MJE13003L-x-T60-F-K
(1)Packing Type (2)Pin Assignment (3)Package Type (4)Rank (5)Lead Plating
(1)K: Bulk (2) refer to Pin Assignment (3) T60: TO-126 (4) x: refer to Classification of hFE1 (5) L: Lead Free Plating, Blank: Pb/Sn
www.unisonic.com.tw Copyright 2005 Unisonic Technologies Co., Ltd
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QW-R204-004,E
MJE13003
ABSOLUTE MAXIMUM RATINGS
PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter Base Voltage
NPN EPITAXIAL SILICON TRANSISTOR
SYMBOL RATINGS UNIT VCEO(SUS) 400 V VCEO 700 V VEBO 9 V Continuous IC 1.5 Collector Current A Peak (1) ICM 3 Continuous IB 0.75 Base Current A Peak (1) IBM 1.5 Continuous IE 2.25 Emitter……
