器件名称: MJE13007
功能描述: POWER TRANSISTOR
文件大小: 337.8KB 共10页
简 介:ON Semiconductort
SWITCHMODEt
NPN Bipolar Power Transistor For Switching Power Supply Applications
The MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switchmode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. VCEO(sus) 400 V Reverse Bias SOA with Inductive Loads @ TC = 100°C 700 V Blocking Capability SOA and Switching Applications Information Standard TO–220
MAXIMUM RATINGS
Rating Collector–Emitter Sustaining Voltage Collector–Emitter Breakdown Voltage Emitter–Base Voltage Collector Current — Continuous Collector Current — Peak (1) Base Current — Continuous Base Current — Peak (1) Emitter Current — Continuous Emitter Current — Peak (1) Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Symbol VCEO VCES VEBO IC ICM IB IBM IE IEM PD TJ, Tstg MJE13007 400 700 9.0 8.0 16 4.0 8.0 12 24 80 0.64 – 65 to 150 Unit Vdc Vdc Vdc Adc Adc Adc Watts W/°C °C
MJE13007
POWER TRANSISTOR 8.0 AMPERES 400 VOLTS 80 WATTS
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case — Junction to Ambient Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds RθJC RθJA TL °1.56° °62.5° 260 °C/W
CASE 221A–09 TO–220AB MJE13007
°C
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%. *Measurement made with thermocouple contacting the bottom insulated m……
