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   首页 > ADVANCEDPHOTONIX > PDB-C613-2

PDB-C613-2

器件名称: PDB-C613-2
功能描述: Solderable Silicon Photodiodes
文件大小: 88.37KB    共1页
生产厂商: ADVANCEDPHOTONIX
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简  介:Solderable Silicon Photodiodes PDB-C613-2 PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] ± .050 [1.27] 2X 6.25 [158.7] 2X .250 [6.35] RED 30 AWG PVC WIRE, ANODE 2X TINNED BLACK 30 AWG PVC WIRE, CATHODE .021 [0.53] .014 [0.36] CHIP DIMENSIONS INCH [mm] CHIP DIMENSIONS INCH [mm] .393 [9.98] SQUARE .035 [0.89] .348 [8.84] ACTIVE AREA SOLDERABLE PHOTODIODE PVC WIRE PACKAGE .385 [9.78] ACTIVE AREA FEATURES DESCRIPTION APPLICATIONS Optical encoder Position sensor Industrial controls Instrumentation Red enhanced The PDB-C613-2 is a silicon red enhanced Photocondutctive solderable photodiode designed for low capacitance High quantum efficiency and high speed for photoconductive applications. ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED VBR TSTG TO TS Reverse Voltage Storage Temperature Operating Temperature Soldering Temperature* -40 -40 75 +125 +100 +224 V °C °C °C Responsivity (A/W) SPECTRAL RESPONSE 0.80 0.70 0.60 0.50 0.40 0.30 0.20 0.10 0.00 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 Wavelength (nm) 1150 SYMBOL PARAMETER MIN MAX UNITS * 1/16 inch from case for 3 seconds max. ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL ISC ID RSH CJ lrange VBR NEP tr CHARACTERISTIC Short Circuit Current Dark Current Shunt Resistance Junction Capacitance Spectral Application Range Breakdown Voltage Noise Equivalent Power Response Time TEST CONDITIONS H = 100 fc, 2850 K VR = 5 V ……
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PDB-C613-2 Solderable Silicon Photodiodes ADVANCEDPHOTONIX
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