器件名称: MMBTH10-4LT1
功能描述: VHF/UHF Transistor (NPN Silicon)
文件大小: 52.24KB 共6页
简 介:MMBTH10LT1, MMBTH104LT1
Preferred Devices
VHF/UHF Transistor
NPN Silicon
Device Marking: 3EM
Device Marking:
Features http://onsemi.com
PbFree Package May be Available. The GSuffix Denotes a
PbFree Lead Finish
1 BASE
COLLECTOR 3
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Symbol VCEO VCBO VEBO Value 25 30 3.0 Unit Vdc Vdc Vdc
3
2 EMITTER
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient (Note 1) Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient (Note 2) Junction and Storage Temperature Range Symbol PD 225 1.8 RθJA PD 300 2.4 RθJA TJ, Tstg 417 55 to +150 mW mW/°C °C/W °C 556 mW mW/°C °C/W Max Unit
1 2
CASE 318 SOT23 STYLE 6
ORDERING INFORMATION
Device MMBTH10LT1 MMBTH10LT1G MMBTH104LT1 Package SOT23 SOT23 (PbFree) SOT23 Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel
1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
Preferred devices are recommended choices for future use and best overall value.
Semiconductor Components Industries, LLC, 2003
1
December, 2003 Rev. 2
Publication Order Number: MMBTH10LT1/D
MMBTH10LT1, MMBTH104LT1
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