器件名称: MMBTH10LT1
功能描述: VHF/UHF Transistors(NPN Silicon)
文件大小: 138.36KB 共4页
简 介:LESHAN RADIO COMPANY, LTD.
VHF/UHF Transistors
NPN Silicon
3 COLLECTOR
MMBTH10LT1
3
1 BASE
2 EMITTER
1 2
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Symbol V V V
CEO CBO EBO
Value 25 30 3.0
Unit Vdc Vdc Vdc
CASE 318–08, STYLE 6 SOT–23 (TO–236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ , Tstg 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C
DEVICE MARKING
MMBTH10LT1 = 3EM
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (I C = 1.0 mAdc, I B= 0 ) Collector–Base Breakdown Voltage (I C = 100 Adc , I E = 0) Emitter–Base Breakdown Voltage (I E = 10 Adc , I C= 0) Collector Cutoff Current ( V CB = 25Vdc , I E = 0 ) Emitter Cutoff Current ( V EB = 2.0Vdc , I C= 0 ) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V (BR)CBO V (BR)EBO I CBO I EBO 30 3.0 — — — — — — 100 100 Vdc Vdc nAdc nAdc V (BR)CEO 25 — — Vdc
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M33–1/4
LESHAN RADIO COMPANY, LTD.
MMBTH10LT1
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON……
