器件名称: MMBTH10-T/R13
功能描述: NPN HIGH FREQUENCY TRANSISTOR
文件大小: 128.31KB 共3页
简 介:MMBTH10
NPN HIGH FREQUENCY TRANSISTOR
This device is designed for VHF/UHF amplifier applications and high output VHF oscillators.
3 COLLECTOR
1 BASE
SPECIFICATION FEATURES
Guaranteed Minimum Current Gain-Bandwidth Product of 650 MHz Collector Currents up to 50mA Industry Standard SOT-23 Package 1 2
2 EMITTER
APPLICATIONS
Low Noise VHF/UHF Amplifiers and Mixers Low Frequency Drift, High Output Oscillators
SOT-23
3
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
TJ = 25°C
Symbol V CE0 V CB0 V EB0 IC PD TJ Tstg Value 25 30 3.0 50 225 -55 to 150 -55 to 150 Units V V V mA mW °C °C
Collector Current - Continuous (Note 1) Power Dissipation (Note 1) Operating Temperature Range Storage Temperature Range
THERMAL CHARACTERISTICS
CHARACTERISTIC Thermal Resistance - Junction to Ambient (Note 1) Symbol R th JA Value 556 Units °C/W
Note 1: Device mounted on FR-5 board 1.0 x 0.75 x 0.062 in. with recommended minimum pad layout
4/18/2006
Page
1
www.panjit.com
MMBTH10
ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise noted)
OFF CHARACTERISTICS
Parameter Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Symbol V(BR)CE0 V(BR)CB0 V(BR)EB0 I CB0 I EB0 Conditions I C = 1.0 mA, IB = 0 I C = 100 uA, IE = 0 I E = 10 uA, IC = 0 VCB = 25 V, E I =0 VEB = 2.0 V, C I =0 Min 25 30 3.0 Typical Max 100 100 Units V V V nA nA
ON CHARACTERISTICS
Para……
