器件名称: 1N5709B
功能描述: ABRUPT VARACTOR DIODE
文件大小: 17.39KB 共1页
简 介:1N5709B
ABRUPT VARACTOR DIODE
PACKAGE STYLE DO-7 DESCRIPTION:
The ASI 1N5709B is an Abrupt Varactor Diode, designed for general purpose applications.
MAXIMUM RATINGS
IR VR PDISS TJ TSTG θJC 20 nA 70 V 400 mW @ TA = 25 °C -65 °C to +175 °C -65 °C to +200 °C 250 °C/W
NONE
CHARACTERISTICS
SYMBOL
VBR IR CT CT4/CT60 Q IR = 10 A VR = 60 V
TC = 25 °C
TEST CONDITIONS
MINIMUM
65
TYPICAL
MAXIMUM
20
UNITS
V nA A pF ---
TA = 150 °C VR = 4.0 V VR = 4.0 V/VR = 60 V VR = 4.0 V f = 1.0 MHz f = 1.0 MHz f = 50 MHz 77.9 3.2 150
20 86.1 3.4
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1202 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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