器件名称: MSASC150W100LR
功能描述: LOW LEAKAGE SCHOTTKY DIODE
文件大小: 80.28KB 共2页
简 介:2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256
1N6823
(MSASC150W100L)
Features
Tungsten/Platinum schottky barrier Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability Epitaxial structure minimizes forward voltage drop Hermetically sealed, low profile ceramic surface mount power package Low package inductance Very low thermal resistance Available as standard polarity (strap-to-anode, 1N6823) and reverse polarity (strap-to-cathode: 1N6823R)
1N6823R
100 Volts 150 Amps LOW LEAKAGE SCHOTTKY DIODE
MAX. 100 100 100 150 4 750 2 -65 to +150 -65 to +150 0.20 0.35 UNIT Volts Volts Volts Amps Amps/° C Amps Amp ° C ° C ° C/W
(MSASC150W100LR)
Maximum Ratings @ 25° C (unless otherwise specified)
DESCRIPTION Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current, Tc≤ 125° C derating, forward current, Tc≥ 125° C Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave Peak Repetitive Reverse Surge Current, tp= 1s, f= 1kHz Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction to Case: 1N6823 1N6823R SYMBOL VRRM VRWM VR IF(ave) dIF/dT IFSM IRRM Tj Tstg θJC
Mechanical Outline
ThinKey 3
Low expansion coef. metal (W or Mo), Ni plated
Cu/Invar/Cu, Ni plated
ceramic
Datasheet# MSC1028A
1N6823
(MSASC150W100L)
1N6823R
(MSASC150W100LR)
Electrical Parameters
DESCRIPTION Reverse (Leakage) Current ……
