器件名称: MZT2955
功能描述: SILICON PLANAR EPITAXIAL TRANSISTORS
文件大小: 186.88KB 共4页
简 介:Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR EPITAXIAL TRANSISTORS
MZT2955 PNP MZT3055 NPN SOT-223 Formed SMD Package
With excellent Safe Operating Area, ideal for Hi-Fi Amplifier and Switching Regulator Applications
ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Base Current Power Dissipation upto Tc=25C Derate above 25C Power Dissipation upto Ta=25C Derate above 25C Junction Temperature Storage Temperature THERMAL RESISTANCE Junction to Case Junction to Ambient in free air SYMBOL VCEO VCBO VEBO IC IB PD PD Tj Tstg VALUE 60 70 5.0 10 6.0 8.0 64 2.0 16 150 - 55 to +150 UNIT V V V A A W mW/C W mW/C C C
Rth (j-c) Rth (j-a)
15.6 62.5
C/W C/W
ELECTRICAL CHARACTERISTICS (Ta=25C unless specified otherwise ) DESCRIPTION Collector Emitter Voltage Collector Cut Off Current Collector Cut Off Current Collector Cut Off Current Emitter Cut Off Current DC Current Gain Collector Emitter Saturation Voltage SYMBOL VCEO ICEX ICBO ICEO IEBO *hFE *VCE (sat) TEST CONDITION IC=1mA, IB=0 VCE=70V, VEB (off)=1.5V VCE=70V, VEB (off)=1.5V, TC=150C VCB=70V, IE=0 VCB=70V, IE=0, TC=150C VCE=30V, IB=0 VEB=5V, IC=0 IC=4A, VCE=4V IC=10A, VCE=4V IC=4A, IB=400mA IC=10A, IB=3.3A IC=4A, VCE=4V IC=0.5A, VCE=10V, f=500KHz 20 5 MIN 60 MAX 1.0 5.0 1.0 10 0.7 5.0 100 1.1 8.0 1.8 2 V V V MHz UNIT V mA mA mA mA mA mA
*VBE(on) Base Emitter On Voltage fT Transition ……
