器件名称: TP2635_07
功能描述: P- Channel Enhancement-Mode Vertical DMOS FETs
文件大小: 562.77KB 共5页
简 介:TP2635/TP2640 P- Channel Enhancement-Mode Vertical DMOS FETs
Features
Low threshold — -2.0V max. High input impedance Low input capacitance Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage Complementary N- and P-channel devices
General Description
These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefcient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Applications
Logic level interfaces – ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches
Absolute Maximum Ratings
Parameter Drain to source voltage Drain to gate voltage Gate to source voltage Operating and storage temperature Soldering temperature1 Value BVDSS BVDGS ±20V
Pin Congurations
NC NC S
SGD 1 2 3 4
8 7 6 5
D D D D
G
-55°C to +150°C +300°C
TO-92
……
