器件名称: TP2640ND
功能描述: P-Channel Enhancement-Mode Vertical DMOS FETs
文件大小: 457.74KB 共4页
简 介:TP2635 TP2640 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs
Ordering Information
BVDSS / BVDGS -350V -400V
RDS(ON) (max) 15 15
VGS(th) (max) -2.0V -2.0V
ID(ON) (min) -0.7A -0.7A
Order Number / Package SO-8 – TP2640LG TO-92 TP2635N3 TP2640N3 Die — TP2640ND
MIL visual screening available.
Features
Low threshold — -2.0V max. High input impedance Low input capacitance Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage Complementary N- and P-channel devices
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Applications
Logic level interfaces – ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches
Package Option……
