器件名称: SA3600
功能描述: Low voltage dual-band RF front-end
文件大小: 172.24KB 共30页
简 介:INTEGRATED CIRCUITS
SA3600 Low voltage dual-band RF front-end
Product specification Supersedes data of 1999 March 18 1999 Nov 02
Philips Semiconductors
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
DESCRIPTION
The SA3600 is an integrated dual-band RF front-end that operates at both cellular (AMPS and TDMA) and PCS (TDMA) frequencies, and is designed in a 20 GHz fT BiCMOS process—QUBiC2. The low-band (LB) receiver is a combined low-noise amplifier (LNA) and mixer. The LNA has a 1.7 dB noise figure (NF) at 881 MHz with 17 dB of gain and an IIP3 of –7 dBm. The wide-dynamic range mixer has a 9.5 dB NF at 881 MHz with 9.5 dB of gain and an IIP3 of +6 dBm. The high-band (HB) receiver is a combined low-noise amplifier (LNA) and mixer, with the low-band and high-band mixers sharing the same mixer output. The LNA has a 2.2 dB NF at 1960 MHz with 16 dB of gain and an IIP3 of –5 dBm. The wide-dynamic range mixer has a 8.5 dB NF at 1960 MHz with 8.5 dB of gain and an IIP3 of +5.5 dBm.
APPLICATIONS
800 to 1000 MHz analog and digital receivers 1800 to 2000 MHz digital receivers Portable radios Mobile communications equipment
PIN CONFIGURATION
HB_LNA_OUT 1 GND 2 HB_LNA_IN 3 VCC 4 24 LB_LNA_OUT 23 GND 22 LB_LNA_IN 21 VCC 20 LB_MXR_IN 19 GND 18 MXR+_OUT 17 MXR–_OUT 16 GND 15 LB_VCO_IN 14 PD3 13 HB_VCO_IN
FEATURES
HB_MXR+_IN 5 HB_MXR–_IN 6 PD1 7 GND 8 HB_VCO_OUT 9 PD2 10 GND 11 LB_VCO_OUT 12
Low current consumption: LB ICC = 14.5 mA; H……
