器件名称: 1N7066
功能描述: 10 AMP 50 -150 VOLTS 30 ns HYPERFAST RECOVERY RECTIFIER
文件大小: 213.27KB 共2页
简 介:PRELIMINARY
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com
1N7066 thru 1N7068 and 1N7066SMS thru 1N7068SMS
10 AMP 50 ─ 150 VOLTS 30 ns HYPERFAST RECOVERY RECTIFIER FEATURES:
Designer’s Data Sheet
Part Number/Ordering Information 1/ 1N70 __ __ __
│ │ │ │ │ │ │ │ │ │ └ │ └ Screening 2/ │ __ = Not Screened │ TX = TX Level │ TXV = TXV │ S = S Level │ └ Package Type __ = Axial Leaded SMS = Surface Mount Square Tab
Voltage/Family
66= 50V 67 = 100V 68 = 150V
Hyper Fast Reverse Recovery: 30ns Maximum4/ High Surge Current: 325 A Maximum Hermetically Sealed Low Forward Voltage Drop .95 @10A Void Free Chip Construction Solid Silver Leads Available in Axial & Square Tab Versions TX, TXV, and S-Level Screening Available 2/ Axial Lead Higher Current Replacements for: 1N5807, 1N5809, 1N5811 Possible SMS Replacements for Stud Mount : 1N5812, 1N5814, 1N5816
MAXIMUM RATINGS 3/ RATING
Peak Repetitive Reverse Voltage And DC Blocking Voltage
1N7066 1N7067 1N7068
SYMBOL
VRRM VRWM VR IO IFSM TJ and TSTG RθJL RθJE
VALUE
50 100 150 10 325 -65 to +175 8 4.5
UNIT
Volts
Average Rectified Forward Current (Axial TL ≤ 55°C; SMS TEC ≤ 100°C ) 5/ Peak Surge Current
(8.3 ms pulse, half sine wave, superimposed on Io, allow junction to reach equilibrium between pulses, TA = 25°C)
Amps Amps °C °C/W
Operating & Storage Temperature Thermal Resistance
NOTES:
1/ For Ordering Information,……
