器件名称: THN4201E
功能描述: NPN SiGe RF TRANSISTOR
文件大小: 227.54KB 共12页
简 介:THN4201 Series
SOT 523 Unit in mm
NPN SiGe RF TRANSISTOR
□ Application
LNA and wide band amplifier up to GHz range
□ Features
o Low Noise Figure NF = 1.5 dB Typ. @ f = 2 GHz, VCE = 3 V, IC = 5 mA NF = 1.7 dB Typ. @ f = 2 GHz, VCE = 1 V, IC = 3 mA o High Gain MAG = 10.5 dB Typ. @ f = 2 GHz, VCE = 3 V, IC = 20 mA MAG = 8.5 dB Typ. @ f = 2 GHz, VCE = 1 V, IC = 3 mA o High Transition Frequency fT = 16.5 GHz Typ. @ VCE = 3 V, IC = 20 mA Pin Configuration Pin No 1 2 3 Symbol B E C Description Base Emitter Collector Unit : mm Dimension 2.0ⅹ1.25, 1.0t 2.0ⅹ1.25, 1.0t 1.6ⅹ0.8, 0.8t 1.4ⅹ0.8, 0.6t
□ Available Package
Product Package SOT323 SOT343 SOT523 SOT623F
□ hFE Classification
Marking hFE AG1 AG2 125 to 300 80 to 160
THN4201U THN4201Z THN4201E THN4201KF
□ Absolute Maximum Ratings
Symbol VCBO VCEO VEBO Ic PT TSTG TJ Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Current (DC) Total Power Dissipation Storage Temperature Operating Junction Temperature Ratings 15 6 2.5 35 150 -65 ~ 150 150 Unit V V V mA mW ℃ ℃
Caution : ESD sensitive device
www.tachyonics.co.kr
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March-2006 Rev 1.0
THN4201 Series
□ Electrical Characteristics ( TA = 25 ℃ )
Value Symbol ICBO Collector Cut-off Current ICEO IEBO hFE fT CCB |S21|2 Emitter Cut-off Current DC Current Gain Transition Frequency VCE = 6 V, IB = 0 mA VEB = 1 V, IC = 0 mA VCE = 3 V, IC = 15 mA VCE = 3 V, IC = 20 mA 80 7.5 6 8.5 8 200 16.5 0.48 8.4 ……
