器件名称: SL22-L
功能描述: Low VF Chip Schottky Barrier Diodes - Silicon epitaxial planer type
文件大小: 69.88KB 共2页
简 介:Low VF Chip Schottky Barrier Diodes
SL22-L THRU SL24-L
Silicon epitaxial planer type
Formosa MS
SMA-L
0.205(5.2) 0.189(4.8) 0.012(0.3) Typ.
Features
Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy M olding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current.
0.110(2.8) 0.094(2.4)
0.181(4.6) 0.165(4.2)
0.075(1.9) 0.067(1.7)
0.040(1.0) Typ.
0.040 (1.0) Typ.
Mechanical data
Case : Molded plastic, JEDEC DO-214AC Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by c athode band Mounting P osition : Any Weight : 0.0015 ounce, 0.05 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (AT TA=25oC unless otherwise noted)
PARAMETER Forward rectified current Forward surge current See Fig.2 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TA = 25o C CONDITIONS Symbol IO IFSM MIN. TYP. MAX. 2.0 50 1.0 10 Rq JA CJ TSTG -55 70 160 +150
o
UNIT A A mA mA C / w pF
o
Reverse current Thermal resistance Diode junction capacitance Storage temperature
VR = VRRM TA = 100o C Junction to ambient f=1MHz and applied 4vDC reverse voltage
IR
C
SYMBOLS
MARKING CODE SL22 SL23 SL24
V RRM
*1
V RMS
*2
VR
*3
VF
*4
Operating temperature (o C)
(V) SL22-L SL23-L SL24-L 20 20 40
(V) 14 14 28
(V) 20 20 40
(V) 0.38 0.40 0.40
*1 Repetitive peak reverse voltage *2 RMS voltage
-55 to +12……
