器件名称: SL22-MH
功能描述: Low VF Chip Schottky Barrier Diodes - Silicon epitaxial planer type
文件大小: 78.23KB 共2页
简 介:Low VF Chip Schottky Barrier Diodes
SL22-MH THRU SL24-MH
Silicon epitaxial planer type
Formosa MS
SOD-123H
0.146(3.7) 0.130(3.3) 0.012(0.3) Typ.
Features
Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current.
0.071(1.8) 0.055(1.4)
0.035(0.9) 0.028(0.7)
0.031(0.8) Typ.
0.031(0.8) Typ.
Mechanical data
Case : Molded plastic, JEDEC SOD-123H Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by c athode band Mounting P osition : Any Weight : 0.0393 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (AT TA=25oC unless otherwise noted)
PARAMETER Forward rectified current Forward surge current See Fig.2 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TA = 25o C CONDITIONS Symbol IO IFSM MIN. TYP. MAX. 2.0 40 1.0 10 Rq JA CJ TSTG -55 70 160 +150
o
UNIT A A mA mA C / w pF
o
Reverse current Thermal resistance Diode junction capacitance Storage temperature
VR = VRRM TA = 100o C Junction to ambient f=1MHz and applied 4vDC reverse voltage
IR
C
SYMBOLS
MARKING CODE SL22 SL23 SL24
V RRM
*1
V RMS
*2
VR
*3
VF
*4
Operating temperature (o C)
(V) SL22-MH SL23-MH SL24-MH 20 30 40
(V) 14 21 28
(V) 20 30 40
(V) 0.38 0.40 0.40
*1 Repetitive peak reverse voltage *2 RMS voltage
-55 to +125
*3 Continuous reverse volt……
