器件名称: SHF-0186
功能描述: 0.05-12 GHz, 0.5 Watt GaAs HFET
文件大小: 730.72KB 共4页
简 介:Product Description
Sirenza Microdevices’ SHF-0186 is a high performance AlGaAs/ GaAs Heterostructure FET (HFET) housed in a low-cost surfacemount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity. Output power at 1dB compression for the SHF-0186 is +28 dBm when biased for Class AB operation at 8V,100mA. The +40 dBm third order intercept makes it ideal for high dynamic range, high intercept point requirements. It is well suited for use in both analog and digital wireless communication infrastructure and subscriber equipment including 3G, cellular, PCS, fixed wireless, and pager systems Typical Gain Performance (8V,100mA)
SHF-0186
0.05-12 GHz, 0.5 Watt GaAs HFET
Pending Obsolescence
Last Time Buy Date: March 15, 2004
40
Gain, Gmax (dB)
30 20 10
Gain Gmax
Product Features +28 dBm Output Power at 1dB Compression +40 dBm Output IP3 High Drain Efficiency 18 dB Gain at 900 MHz (Application circuit) 15 dB Gain at 1960 MHz (Application circuit) See App Note AN-020 for circuit details Applications Analog and Digital Wireless Systems 3G, Cellular, PCS Fixed Wireless, Pager Systems
Test Frequency [1] = 100% Tested [2] = Sample Tested U nits Min. Typ. Max.
0 -10 0 2
Frequency (GHz)
4
6
8
10
12
Symbol
D evice C haracteristics, T = 25°C VDS=8V, IDQ=100mA (unless otherw ise noted)
Gmax
Maxi mum Avai lable Gai n ZS=ZS*, ZL=ZL* Inserti on Gai n ZS=ZL= 50 Ohms Power Gai……
