器件名称: SPF-2086T
功能描述: Low Noise pHEMT GaAs FET 0.1 - 12 GHz Operation
文件大小: 583.24KB 共5页
简 介:Product Description
Sirenza Microdevices’ SPF-2086T is a high performance 0.25m pHEMT Gallium Arsenide FET with Schottky barrier gates. This 300m device is ideally biased at 3V,20mA for lowest noise performance and battery powered requirements. At 5V,40mA the device delivers excellent output TOI of 32 dBm. It provides ideal performance as driver stages in many commercial, industrial and military LNA applications.
SPF-2086T
Low Noise pHEMT GaAs FET
0.1 - 12 GHz Operation
35 30
Gain, Gmax (dB)
Typical Gain Performance
3v, 20mA 5v, 40mA
25 20 15 10 5 0 0 2 4 6 8 10 12
Gmax Gain
Product Features 22 dB Gmax at 1.9 GHz 0.4 dB FMIN at 1.9 GHz +32 dBm Output IP3 +20 dBm Output Power at 1dB Compression Applications LNA for Analog and Digital Wireless Systems 3G, Cellular, PCS Fixed Wireless, Pager Systems Driver Stage for low power applications
Test C ondition [1] = 100% Tested U nits Min. Typ. Max.
Frequency (GHz)
Symbol
D evice C haracteristics, T = 25°C VDS=3V, IDQ=20mA (unless otherw ise noted)
Gmax
Maxi mum Avai lable Gai n ZS=ZS*, ZL=ZL* Inserti on Gai n ZS=ZL= 50 Ohms Mi ni mum Noi se Fi gure ZS=ΓOPT , ZL=ZLOPT Output Thi rd Order Intercept Poi nt ZS=ZSOPT , ZL=ZLOPT Output 1dB C ompressi on Poi nt ZS=ZSOPT, ZL=ZLOPT Saturated D rai n C urrent VDS = VDSP, VGS= 0V Tranconductance: VDS = VDSP, VGS= -0.25V Pi nch-Off Voltage: VDS = 2.0V, IDS = 150A Gate-to-Source Breakdown Voltage IGS = 0.3mA, drai n open Gate-to-D rai n Breakdown Voltage IGD = 0.3mA, VGS = -3.0……
