EEPW首页 | 器件索引 | 厂商列表 | IC替换 | 微缩略语 | 电路图查询
器件查询:
400万器件资料库等您来搜!
   首页 > STMICROELECTRONICS > TYNxx10

TYNxx10

器件名称: TYNxx10
功能描述: SCR
文件大小: 229.34KB    共4页
生产厂商: STMICROELECTRONICS
下  载:    在线浏览   点击下载
简  介: TYN210 ---> TYN1010 SCR A FEATURES High surge capability High on-state current High stability and reliability s s s G K DESCRIPTION The TYN210 ---> TYN1010 Family of Silicon Controlled Rectifiers uses a high performance glass passivated technology. This general purpose Family of Silicon Controlled Rectifiers is designed for power supplies up to 400Hz on resistive or inductive load. K A G TO-220AB ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) IT(AV) ITSM I2t dI/dt Tstg Tj Tl Parameter RMS on-state current (180° conduction angle) Average on-state current (180° conduction angle, single phase circuit) Non repetitive surge peak on-state current (Tj initial = 25°C) I2t value Critical rate of rise of on-state current Gate supply: IG = 100mA dIG/dt = 1A/s Storage and operating junction temperature range Maximum lead soldering temperature during 10s at 4.5mm from case Tc = 100°C Tc = 100°C tp = 8.3ms tp = 10ms tp = 10ms Value 10 6.4 105 100 50 50 -40 to +150 -40 to +125 260 A2s A/s °C °C Unit A A A TYN Symbol VDRM VRRM Parameter 210 Repetitive peak off-state voltage Tj = 125°C 200 410 400 610 600 810 800 1010 1000 V Unit September 2001 - Ed: 1A 1/4 TYN210 ---> TYN1010 THERMAL RESISTANCE Symbol Rth (j-a) Rth (j-c) DC Junction to ambient Junction to case for DC Parameter Value 60 2.5 Unit °C/W °C/W GATE CHARACTERISTICS (maximum values) PG(AV) = 1W PGM = 10W (tp = 20s) IFGM = 4A (tp = 20s) ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD tgt IL IH VTM IDRM IRRM dV/dt tq ……
相关电子器件
器件名 功能描述 生产厂商
《电子产品世界》杂志社 版权所有 北京东晓国际技术信息咨询有限公司
Copyright ©2002 ELECTRONIC ENGINEERING & PRODUCT WORLD. All rights reserved.
京ICP备12027778号-2