器件名称: STD100NH02L
功能描述: N-CHANNEL 24V - 0.0042 ohm - 60A DPAK/IPAK STripFET
文件大小: 511.28KB 共12页
简 介:N-CHANNEL 24V - 0.0042 - 60A DPAK/IPAK STripFET III POWER MOSFET
TYPE STD100NH02L
s s s s s s s
STD100NH02L
VDSS 24 V
RDS(on) < 0.0048
ID 60 A(2)
s
TYPICAL RDS(on) = 0.0042 @ 10 V TYPICAL RDS(on) = 0.005 @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED LOW THRESHOLD DEVICE THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX “-1") SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4")
3 2 1
IPAK TO-251 (Suffix “-1”) DPAK TO-252 (Suffix “T4”)
3 1
DESCRIPTION
The STD100NH02L utilizes the latest advanced design rules of ST’s proprietary STripFET technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTES
ABSOLUTE MAXIMUM RATINGS
Symbol Vspike(1) VDS VDGR VGS ID(2) ID(2) IDM(3) Ptot EAS (4) Tstg Tj Parameter Drain-source Voltage Rating Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 30 24 24 ± 20 60 60 240 100 0.67 800 -55 to 175 Unit V V V V A A A W W/°C mJ °C
September 2003
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STD100NH02L
THERMAL DATA
Rthj-case Rthj-amb Tl Thermal Resistance Junct……
