器件名称: STD17NF03L
功能描述: N-CHANNEL 30V - 0.038ohm - 17A - DPAK/IPAK STripFET
文件大小: 264.41KB 共9页
简 介:N-CHANNEL 30V - 0.038 - 17A - DPAK/IPAK STripFET POWER MOSFET
TYPE STD17NF03L
s s s s
STD17NF03L
VDSS 30V
RDS(on) <0.05
ID 17A
s
TYPICAL RDS(on) = 0.038 EXCEPTIONAL dv/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL ADD SUFFIX “-1” FOR ORDERING IN IPAK VERSION
3 3 2 1 1
IPAK
DPAK
DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s SOLENOID AND RELAY DRIVERS s AUTOMOTIVE ENVIRONMENT
s
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 30 30 ±20 17 12 68 20 0.13 6 200 –65 to 175 175
(1) I SD ≤17A, di/dt ≤300A/s, VDD ≤ V (BR)DSS, Tj ≤ T JMAX. (2) Starting T j=25°C, ID=11A, V DD=15V
Unit V V V A A A W W/°C V/ns mJ °C °C
(q) Pulse width limited ……
