器件名称: STD19NE06L
功能描述: N - CHANNEL 60V - 0.038 ohm - 19A - TO-251/TO-252 STripFET POWER MOSFET
文件大小: 90.74KB 共9页
简 介:
STD19NE06L
N - CHANNEL 60V - 0.038 - 19A - TO-251/TO-252 STripFET POWER MOSFET
TYPE STD19NE06L
s s s s
V DSS 60 V
R DS(o n) < 0.05
ID 19 A
s
TYPICAL RDS(on) = 0.038 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL
3 2 1
1 3
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS
IPAK TO-251 (Suffix ”-1”)
DPAK TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol V DS V DGR VGS ID ID I DM ( ) P tot T st g Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k ) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating F actor Storage T emperature Max. Operating Junction Temperature
o o o
Value 60 60 ± 20 19 13 76 45 0.3 -65 to 175 175
Unit V V V A A A W W /o C
o o
C C
() Pulse width limited by safe operating area
February 1999
1/9
STD19NE06L
THERMAL DATA
R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction……
