器件名称: STD20NF06
功能描述: N-CHANNEL 60V - 0.032
文件大小: 370.75KB 共10页
简 介:STD20NF06
N-CHANNEL 60V - 0.032 - 24A DPAK STripFET II POWER MOSFET
TYPE STD20NF06
■ ■ ■ ■
VDSS 60 V
RDS(on) < 0.040
ID 24 A
TYPICAL RDS(on) = 0.032 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION
3 1
DPAK TO-252 (Suffix “T4”)
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS ■ HIGH SWITCHING APPLICATIONS
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE STD20NF06 MARKING D20NF06 PACKAGE TO-252 PACKAGING TAPE & REEL
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM() Ptot dv/dt (1) EAS(2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 60 60 ± 20 24 17 96 60 0.4 10 300 -55 to 175
(1) ISD ≤24A, di/dt ≤100A/s, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (2) Starting Tj = 25 oC, ID =10 A, VDD = 45V
Unit V V V A A A W W/°C V/ns mJ °C
() Pulse width limited by safe operating area.
June 2004
Rev.3.0.6
1/10
STD20NF06
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