器件名称: STPRF1660CT
功能描述: Ultra Fast Recovery Diodes
文件大小: 100.31KB 共2页
简 介:STPRF1650CT thru STPRF1660CT
Ultra Fast Recovery Diodes
Dimensions TO-220AB
A C(TAB) A C A
C
A
Dim. A B C D E F G H J K M N Q R
A=Anode, C=Cathode, TAB=Cathode
VRRM V STPRF1650CT 500 STPRF1660CT 600
VRMS V 350 420
VDC V 500 600
Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110
Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79
Symbol I(AV) IFSM VF IR CJ TRR ROJC
Characteristics Maximum Average Forward Rectified Current @TC=100 oC
Maximum Ratings 16 125 1.5 @TJ=25oC @TJ=100oC 5 500 80 50 1.5 -55 to +150
Unit A A V uA pF ns
o
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Maximum Forward Voltage At 8.0A DC Maximum DC Reverse Current At Rated DC Blocking Voltage
Typical Junction Capacitance Per Element (Note 1) Maximum Reverse Recovery Time (Note 2) Typical Thermal Resistance (Note 3)
C/W
o
TJ, TSTG Operating And Storage Temperature Range NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. 2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A. 3. Thermal Resistance Junction To Case.
C
FEATURES
* Glass passivated chip * Superfast switching time for high efficiency * Low forward voltage drop and high current capability * Low reverse leakage cu……
